Molecular Epidemiological Study of a Human Brucellosis Outbreak - Weihai City, Shandong Province, China, 2022.

What is already known about this topic?: Brucellosis, mainly caused by Brucella melitensis (B. melitensis), is regarded as a significant zoonotic disease in China. In Weihai, located at the eastern end of the Shandong Peninsula, brucellosis has been in a low epidemic phase for the past five years. What is added by this report?: This was the initial report of a brucellosis outbreak in the last five years. Strains of B. melitensis bv. 3 from Weihai and other cities showed a close genetic relationship, suggesting a potential common ancestry. What are the implications for public health practice?: Epidemiological investigations depend on standardized and effective molecular typing methods and analysis tools for public health laboratories to identify and trace outbreaks. Understanding the circulation patterns of livestock in free-range households in heavily affected areas is essential for controlling the spread of brucellosis.

First-principles study of the effect of S-atom doping on the optoelectronic properties of stanene.

CONTEXT: Based on the first principles, the influence of S-atom doping on the electronic and optical properties of stanene is comprehensively examined in this work. The results show that pure stanene is a quasi-metal with zero bandgap. After doping with an S atom, opening the bandgap of pure stanene becomes possible and the state of the stanene is converted from quasi-metal to semiconductor. Analysis of the density of states reveals that the density of states of all doped systems is primarily made of the p-orbital of the Sn. The overlap population analysis showed that charge transfer occurs between S and Sn atoms under different doping concentrations. The charge transfer increases with increasing doping concentration. The charge transfer reaches a maximum at a doping concentration of 9.38%. The increase in doping concentration causes blue-shifting of the absorption and reflection peaks of the doped system as compared to those of pure stanene. It is expected that these studies can provide theoretical guidance for the practical application of stanene in optoelectronic devices. METHODS: All simulations are undertaken with the Cambridge Sequential Total Energy Package (CASTEP) (Wei et al. Physica B: Condensed Matter 545:99, 2018; Bafekry et al. Phys Chem Chem Phys, 2021; Zala et al. Appl Surf Sci, 2022; Bafekry et al. Nanotechnology, 2021; Bafekry et al. Phys Chem Chem Phys, 2021; Bafekry et al. J Phys: Condens Matter, 2021), which is based on density functional theory (DFT). For the exchange correlation, the generalized gradient approximation (GGA) is implemented with the Perdew-Burke-Ernzerhof (PBE) functional Perdew et al. Phys Rev B Condens Matter 48:4978, 1993. Using the Monkhorst-Pack technique, a specific K-point sample of the Brillouin zone was carried out Monkhorst and Pack Phys Rev B 13:5188, 1976. After the convergence tests, the K-point grid was set to 3 × 3 × 1. The plane-wave truncation energy was set to 400 eV. The residual stress for all atoms was 0.03 eV/Å. The energy convergence criterion was 1.0 × 10-5 eV. To prevent recurring interactions between the layers, a vacuum layer with a thickness of 20 Å was established in the Z-direction.

Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study.

CONTEXT: The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of - 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200-300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. METHODS: In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst-Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10-5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms.

Effect of bending deformation on the electronic and optical properties of O atoms adsorbed by Be3N2.

CONTEXT: In this paper, the optimum coverage of 4.44% and the optimum adsorption sites were determined for the Be3N2 adsorption system of O atoms at different coverages based on density functional theory. The electronic and optical properties of the model were investigated by applying bending deformation to the model at these coverage and adsorption sites. Adsorption of O atoms disrupts the geometrical symmetry of Be3N2, resulting in orbital rehybridization and lowering its band gap. Bending deformation causes the band gap of the adsorbed O atom structure of Be3N2 to first increase and then decrease, resulting in the modulation of its band gap. With increasing bending deformation, the adsorbed system is redshifts, and the degree of redshift increases with increasing bending deformation. METHODS: All calculations in this paper were performed using the first-principles-based CASTEP module of Materials Studio (MS). The generalized gradient approximation (GGA) plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof (PBE) Perdew et al. Phys Rev Lett 77:3865, 1996 generalized functional were used in the geometry optimization and calculation process to calculate the exchange-correlation potential between electrons. The effect of coverage on the electronic and optical properties of the Be3N2-adsorbed O atom system was investigated by adsorbing different numbers of O atoms on a monolayer of Be3N2. The Be3N2 protocell contains two N atoms and three Be atoms with a space community of P6/MMM (No.191). The original cell was expanded 3 times along the direction of the base vectors a and b in the Be3N2 plane to create a 3 × 3 × 1 monolayer Be3N2 supercell system. A vacuum layer of 15 Å is set in the direction of the crystal plane of the vertical monolayer Be3N2 supercell to eliminate interactions between adjacent layers. In the overall energy convergence test of the Be3N2 supercell, the plane wave truncation energy was set to 500 eV, and the energy difference between the calculations given in the literature Reyes-Serrato et al. J Phys Chem Solids 59:743-6, 1998 using 550 eV was less than 0.01 eV, verifying the reliability of the data at a truncation energy of 500 eV. The Monkhorst-Pack special k-point sampling method Monkhorst et al. Phys Rev B 13:5188, 1976 was used in the structural calculations, and the grid was set to 3 × 3 × 1. The geometric optimization parameters are set as follows: the self-consistent field iteration convergence criterion is 2.0 × 10-6 eV, and the iterative accuracy convergence value is not less than 1.0 × 10-5 eV/atom for the total force of each atom and less than 0.03 eV/Å for all atomic forces. In addition the high-symmetry k-point path is taken as Γ(0,0,0) → M(0,0.5,0) → K(- 1/3,2/3,0) → Γ(0,0,0) Chen et al, AIP Adv 8:105105, 2018.

Effect of compressive strain on electronic and optical properties of Cr-doped monolayer WS2.

CONTEXT: The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. METHODS: This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst-Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10-5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force.

Electronic structure and optical properties of nitrogen-doped antimonene under biaxial strain: first-principles study.

CONTENT: In this thesis, the role of N atom doping and biaxial strain in modulating the electronic structure and optical properties of antimonene has been deeply investigated using a first-principles approach based on density-functional theory. The results show that N doping significantly reduces the band gap of antimonene and introduces new electronic states, thus affecting its electronic structure. In terms of optical properties, N doping reduces the static permittivity of antimonene and alters its absorption, reflection, and energy loss properties. In addition, biaxial strain further enhanced the modulation effect of these properties. This study not only provides theoretical support for the application of antimonene in the field of high-performance two-dimensional electronic and optoelectronic devices, but also reveals strain and doping as an effective means to modulate the physical properties of two-dimensional materials. METHODS: For the calculations, we used the DFT-based CASTEP software package for the simulation of the electronic structure. In order to more accurately characterize the weak interactions between two-dimensional materials, we specifically introduced the Van der Waals dispersion correction. We have chosen the Perdew-Burke-Ernzerhof (PBE) exchange-correlation generalization under the generalized gradient approximation (GGA) and combined it with the Van der Waals correction term in order to fully consider the electronic structure of antimonene. For the calculation parameter settings, we set the truncation energy to 400 eV to ensure the accuracy of the calculation. Meanwhile, we adopt a 6 × 6 × 1 k-point grid for Brillouin zone sampling to obtain more accurate energy band structure and density of states information. For the convergence settings, the convergence criteria for both the system energy and the interaction force between atoms were set to 1 × 10-5 eV and 0.01 eV/Å, respectively. We selected a 3 × 3 × 1 supercell model with 18 Sb atoms. A vacuum thickness of 18 Å was established in the Z direction, which is sufficient to avoid interactions between the two atomic layers above and below the periodic structure.

Bending deformation modulation of the optoelectronic properties of molybdenum ditelluride doped with nonmetallic atoms X (X = B, C, N, O): a first-principles study.

CONTEXT: A first-principles approach based on density functional theory was used to explore the effect of bending deformation on the electrical structure of molybdenum ditelluride doped with nonmetallic atoms X (X = B, C, N, and O). The study included alternate doping of nonmetallic atoms, as well as a comparison of the effects of intrinsic bending deformation and nonmetallic doping deformation. The results demonstrate that boron atom doping raises the Fermi energy level. Examining the energy band structure indicates that the intrinsic molybdenum ditelluride is a direct band gap semiconductor, which is transformed from a direct band gap to an indirect band gap after doping. We selected boron-doped systems for bending deformation and compared them with the intrinsic systems. With increasing deformation, all systems start to shift from semiconductor to metal. When the deformation reaches 8°, the energy levels fill and the electron energy increases. The intrinsically bent systems transition from direct band gap to indirect band gap and eventually to metal. The indirect band gap semiconductor-to-metal transition process occurs after the bending deformation of the boron-doped atoms. The analytical results show that the absorption and reflection peaks of the molybdenum ditelluride system are blue-shifted after the bending deformation of the boron-doped atoms. METHODS: Under fundamental principles, this research depends on the density functional theory framework (DFT) using the CASTEP module in the Materials-Studio software. The plane-wave pseudopotential approach with modified gradient approximation and the Perdew-Burke-Ernzerhof (PBE) generalized function is used for structure optimization and total energy calculations of the X-doped (X = B, C, N, O) MoTe2 system at different shape variables. Geometry optimization of the 27-atom superlattice MoTe2 was carried out, followed by alternative doping of tellurium atoms in the molybdenum ditelluride with B, C, N, and O. In this paper, the intrinsic bending deformation and B-doping of molybdenum ditelluride were selected for deformation analysis. Intrinsic bending deformations and boron-doped molybdenum ditelluride with bending angles ranging from 2° to 8° were employed for deformation investigation. In Fig. 1, pink is used to represent doped B atoms, orange is used to describe Te atoms, and green is used to represent Mo atoms. For the degree of deformation of molybdenum ditelluride, in this paper, it is expressed by the bending angle, i.e., the angle of the plane of molybdenum ditelluride after bending and deformation of a single layer of molybdenum ditelluride concerning the angle of the plane folded for the deformed plane. How to do it: For ease of presentation, the atomic chains are set to different colors. The purple part on both sides of the figure is bent and deformed, 3-5 atoms are fixed appropriately, and the middle part is deformed. On this basis, the bending deformation of intrinsically doped and boron-doped MoTe2 is comparatively analyzed. The effect of boron-doped atoms on the structure of MoTe2 is systematically investigated to study its structural stability and electronic structure. Fig. 1 a1 and a2 The main and side views of intrinsic MoTe2; b1 and (b2) the main and side views of MoTe2 doped with boron atoms bent by 8°.

Extract of Silphium perfoliatum L. improve lipid accumulation in NAFLD mice by regulating AMPK/FXR signaling pathway.

ETHNOPHARMACOLOGICAL RELEVANCE: Globally, the incidence rate and number of patients with nonalcoholic fatty liver disease are increasing, which has become one of the greatest threats to human health. However, there is still no effective therapy and medicine so far. Silphium perfoliatum L. is a perennial herb native to North America, which is used to improve physical fitness and treat liver and spleen related diseases in the traditional medicinal herbs of Indian tribes. This herb is rich in chlorogenic acids, which have the functions of reducing blood lipids, losing weight and protecting liver. However, the effect of these compounds on nonalcoholic fatty liver disease remains unclear. AIM OF THE STUDY: Clarify the therapeutic effects and mechanism of the extract (CY-10) rich in chlorogenic acid and its analogues from Silphium perfoliatum L. on non-alcoholic fatty liver disease, and to determine the active compounds. MATERIALS AND METHODS: A free fatty acid-induced steatosis model of HepG2 cells was established to evaluate the in vitro activity of CY-10 in promoting lipid metabolism. Further, a high-fat diet-induced NAFLD model in C57BL/6 mice was established to detect the effects of CY-10 on various physiological and biochemical indexes in mice, and to elucidate the in vivo effects of the extract on regulating lipid metabolism, anti-inflammation and hepatoprotection, and nontarget lipid metabolomics was performed to analyze differential metabolites of fatty acids in the liver. Subsequently, western blotting and immunohistochemistry were used to analyze the target of the extract and elucidate its mechanism of action. Finally, the active compounds in CY-10 were elucidated through in vitro activity screening. RESULTS: The results indicated that CY-10 significantly attenuated lipid droplet deposition in HepG2 cells. The results of in vivo experiments showed that CY-10 significantly reduce HFD-induced mouse body weight and organ index, improve biochemical indexes, oxidation levels and inflammatory responses in the liver and serum, thereby protecting the liver tissue. It can promote the metabolism of unsaturated fatty acids in the liver and reduce the generation of saturated fatty acids. Furthermore, it is clarified that CY-10 can promote lipid metabolism balance by regulating AMPK/FXR/SREPB-1c/PPAR-γ signal pathway. Ultimately, the main active compound was proved to be cryptochlorogenic acid, which has a strong promoting effect on the metabolism of fatty acids in cells. Impressively, the activities of CY-10 and cryptochlorogenic acid were stronger than simvastatin in vitro and in vivo. CONCLUSION: For the first time, it is clarified that the extract rich in chlorogenic acids and its analogues in Silphium perfoliatum L. have good therapeutic effects on non-alcoholic fatty liver disease. It is confirmed that cryptochlorogenic acid is the main active compound and has good potential for medicine.

First principle study of the effect of doping on the optoelectronic properties of Cr-adsorbed MoS2.

CONTEXT: This study explores, for the first time, using first principles, the impact of substitutional doping with boron (B), carbon (C), and nitrogen (N) on the adsorption of chromium (Cr) on monolayer MoS2. The effects of doping on the Cr adsorption behavior of MoS2 were investigated using four MoS2 systems, namely, pure, boron (B)-doped, carbon (C)-doped, and nitrogen (N)-doped, in order to gain an in-depth understanding of the mechanism of the effects of doping on the electronic structure and optical properties of Cr adsorbed by MoS2, to optimize the properties of MoS2, to explore new areas of application, and to promote the development of materials science. Four MoS2 adsorption systems of Cr adsorption on pure, B-doped, C-doped, and N-doped MoS2 were optimized, and the optimized results showed that the stable adsorption location of Cr on both pure and doped MoS2 was the hollow location at the top of the folded hexagon. The findings reveal that pure MoS2 has an adsorption effect on Cr, and doped elements B, C, and N can promote the adsorption of Cr on MoS2, and the strong and weak order of this promotion is B > C > N. METHODS: In this paper, we use the CASTEP module in the simulation software Materials Studio to perform simulation calculations and analyses to optimize the simulation of Cr adsorption by MoS2 doped with B, C, and N atoms using the generalized gradient approximation (GGA) plane-wave pseudo-potential method (Perdew et al. Phys Rev Lett 77(18):3865-3968, 1996), as well as Perdew-Burke-Ernzerhof (PBE) generalized functionals (Segall et al. J Phys: Condens Matter 14(11):2717-2744, 2022). The convergence test reveals that it is more reasonable to set the K-point network to 3 × 3 × 1 and the truncation energy to 400 eV. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 9 Mo atoms is selected. The convergence value of the iteration accuracy is 1.0e - 5eV/atom, and all the atomic forces are less than 0.02eV/Å. Additionally, to prevent MoS2 interlayer interaction, a vacuum layer with a thickness of 18 Å is set in the C direction. The geometrical optimization of the model is performed first, and then the corresponding adsorption energies of the model and the nature of the electronic structure are analyzed.

First-principles study of the effects of doping B, N, and O on the photoelectric properties of Cr adsorbed GaS.

CONTEXT: To lessen the impact of the dangerous metal Cr, this paper applies the first principles to investigate the adsorption behavior and photoelectric properties of GaS on Cr. The effects of doped GaS on Cr adsorption behavior are investigated with four GaS systems, which are pure, boron (B)-doped, nitrogen (N)-doped, and oxygen (O)-doped, in order to maximize the characteristics of GaS for use in novel sectors, to obtain understanding of the impact of doping on the electronic structure and optical properties of GaS adsorption of Cr, as well as to promote the development of the material. Four GaS adsorbed Cr systems, pure, B-doped, N-doped, and O-doped, are optimized, and the optimized results show that the stable adsorption position of Cr on both pure and doped GaS is the top position of Ga atoms, whereas doped elements B, N, and O can promote the adsorption of Cr on GaS, and the order of the strength of this promotion is B > N > O. METHOD: In this paper, molecular simulation calculations and analyses using the CASTEP module in the software Materials Studio are performed to simulate the structure optimization of GaS-adsorbed Cr materials doped with B, N, and O atoms by using the generalized gradient approximation (GGA) plane-wave pseudopotential approach [1] and the Perdew-Burke-Ernzerhof (PBE) generalized function [2]. From the convergence test, it is reasonable to set the K-point network to 4 × 4 × 1 and the truncation energy to 500 eV [3]. In this paper, a 3 × 3 × 1 supercell structure with 18 S atoms and 18 Ga atoms is selected. The convergence value of the iterative accuracy is 1.0e - 5 eV/atom, and all the atomic forces are less than 0.02 eV/Å. A vacuum layer of 16 Å is also set in the C direction to avoid interlayer interactions of GaS. First, we optimize the geometry of the model and then analyze the nature of the adsorption energy and electronic structure corresponding to the model.

Effect of tensile deformation on the optoelectronic properties of black phosphine-doped lithium atoms.

CONTEXT: First-principles calculations based on the generalized gradient approximation gradient and the Perdew-Burke-Ernzerhof function (GGA-PBE generalized function) are carried out on the intrinsic and lithium-doped black phosphine systems to investigate the effects of different uniaxial tensile deformations on the electronic and optical properties of the systems. It is shown that the structural stability of the intrinsic and lithium-doped systems decreases with increasing tensile deformation, and all systems are most stable at 0% tensile deformation. The intrinsic black phosphazene system is a direct band gap semiconductor, and its band gap increases and then decreases with tensile deformation and reaches a maximum value of 1.086 eV at 4%. Lithium doping closes the band gap of the black phosphazene system, which is metallic in nature, but the band gap is opened up when the tensile deformation is 4-6%. From the density of states analysis, the density of states of all systems is basically contributed by the s and p orbitals, with little contribution from the d orbitals, and the contribution from the p orbitals is dominant. From the analysis of optical properties, the increase of tensile deformation causes the absorption peaks of the intrinsic system to redshift then blueshift then redshift, causes the absorption peaks of the lithium-doped system to redshift, and causes the reflection peaks of all systems to redshift. In addition, lithium doping blueshifts the absorption and reflection peaks of the systems compared to the intrinsic black phosphazene system. METHODS: Using the CASTEP section of the Materials Studio software, first-principle calculations based on density functional theory are done on the top-site doped lithium atoms of monolayer black phosphine under uniaxial stretching deformation in the a-direction, and the generalized gradient approximation gradients and Perdew-Burke-Ernzerhof functions (GGA-PBE generalized functionals) are used for the optimization and approximation process. The optimization parameters are set for the supercell structure: its plane-wave truncation energy is set to 400 eV, its Brillouin zone K-point grid is set to 3*3*3, its self-consistent field iteration accuracy convergence value is 2.0e-6 eV/atom, the convergence basis of its structural optimization is 0.02 eV/ Å, and the convergence of the stress value is 0.05 gpa. During the optimization period, the interaction force between atoms is 0.03 eV/ Å and the atomic displacement is less than 0.001 Å. To eliminate the effect of interlayer forces, a vacuum layer with a thickness of 15 Å is placed in its vertical direction (i.e., c-axis direction).

A sustainable metal-free and additive-free olefination route to N-heteroazaarenes from methyl-substituted heterocycles and amines.

A green and sustainable metal-free, additive-free olefination approach is proposed for the facile synthesis of various unsaturated N-heteroazaarenes from simple methyl-substituted heteroarenes and amines. The developed protocol employs only air as the sole oxidant and provides a useful strategy for obtaining various E-selective conjugated heterocyclic olefins. This provides a useful strategy for application in generating grams of a variety of unsaturated N-heteroazaarenes (up to 20.33 grams) and the synthetic imaging agents of STB-8 (2.40 gram) with high regioselectivity in one pot.

Construction of Trisubstituted Hydrazones via Base-Mediated Cascade Condensation N-Alkylation.

A practical base-promoted tandem condensation N-alkylation reaction for the formation of trisubstituted hydrazones has been developed employing aldehydes and hydrazines with alkyl halides. Crucially, this reaction successfully overcomes chemoselectivity problems, allowing for the reaction of multiple components in a one-pot manner. Halo- and heterofunctional groups, as well as free hydroxyl and amino groups, are tolerated in this transformation to produce a wide range of trisubstituted hydrazones in good to excellent yields.

Epidemiology and Clinical Characteristics of Pediatric Sepsis in PICUs in Southwest China: A Prospective Multicenter Study.

OBJECTIVES: To describe the epidemiological characteristics of pediatric sepsis in Southwest China PICUs. DESIGN: A prospective, multicenter, and observational study. SETTING: Twelve PICUs in Southwest China. PATIENTS: The patients admitted to the PICU from April 1, 2022, to March 31, 2023. The age ranged from 28 days to 18 years. All patients met the criteria of severe sepsis or septic shock. INTERVENTIONS: None. MEASUREMENTS AND MAIN RESULTS: Of the 31 PICUs invited to participate, 12 PICUs (capacity of 292 beds) enrolled patients in the study. During the study period, 11,238 children were admitted to the participating PICUs, 367 (3.3%) of whom met the diagnosis of severe sepsis or septic shock. The most prevalent sites of infection were the respiratory system (55%) and the digestive system (15%). The primary treatments administered to these patients included antibiotics (100%), albumin (61.3%), invasive mechanical ventilation (58.7%), glucocorticoids (55.6%), blood products (51%), gammaglobulin (51%), and vasoactive medications (46.6%). Sepsis-related mortality in the PICU was 11.2% (41/367). Nearly half of the sepsis deaths occurred within the first 3 days of PICU admission (22/41, 53.7%). The mortality rate of septic shock (32/167, 19.2%) was significantly higher than that of severe sepsis (9/200, 4.5%; p < 0.001). The outcomes of a multivariate logistic regression analysis suggested that a higher pediatric Sequential Organ Failure Assessment score, and the use of invasive mechanical ventilation and vasoactive medications were independently associated with PICU mortality in children with sepsis. CONCLUSIONS: This report updates the epidemiological data of pediatric sepsis in PICUs in Southwest China. Sepsis is still a life-threatening disease in children.

Immunogram defines four cancer-immunity cycle phenotypes with distinct clonal selection patterns across solid tumors.

BACKGROUND: The cancer-immunity cycle (CI cycle) provides a theoretical framework to illustrate the process of the anticancer immune response. Recently, the update of the CI cycle theory emphasizes the importance of tumor's immunological phenotype. However, there is lack of immunological phenotype of pan-cancer based on CI cycle theory. METHODS: Here, we applied a visualizing method termed 'cancer immunogram' to visualize the state of CI cycle of 8460 solid tumors from TCGA cohort. Unsupervised clustering of the cancer immunogram was performed using the nonnegative matrix factorization (NMF) analysis. We applied an evolutionary genomics approach (dN/dS ratio) to evaluate the clonal selection patterns of tumors with distinct immunogram subtypes. RESULTS: We defined four major CI cycle patterns across 32 cancer types using a cancer immunogram approach. Immunogram-I was characterized by 'hot' and 'exhausted' features, indicating a favorable prognosis. Strikingly, immunogram-II, immunogram-III, and immunogram-IV represented distinct immunosuppressive patterns of 'cold' tumor. Immunogram-II was characterized by 'cold' and 'radical' features, which represented increased expression of immune inhibitor molecules and high levels of positive selection, indicating the worst prognosis. Immunogram-III was characterized by 'cold' and 'recognizable' features and upregulated expression of MHC I molecules. Immunogram-IV was characterized by 'cold' and 'inert' features, which represented overall immunosuppression, lower levels of immunoediting and positive selection, and accumulation of more tumor neoantigens. In particular, favorable overall survival was observed in metastatic urothelial cancer patients with immunogram-I and immunogram-IV after immune checkpoint inhibitor (ICI) therapy. Meanwhile, a higher response rate to ICI therapy was observed in metastatic gastric cancer patients with immunogram-I phenotype. CONCLUSIONS: Our findings provide new insight into the interaction between immunity and cancer evolution, which may contribute to optimizing immunotherapy strategies.

Palladium-catalyzed allylation and carbonylation: access to allylhydrazones and allyl acylhydrazones.

A palladium-catalyzed allylation of hydrazines with allyl alcohols and aldehydes was developed, enabling the syntheses of a series of allylhydrazones in good to excellent yields with high regioselectivity. Furthermore, the four-component tandem allylation carbonylation of hydrazines with allyl alcohols and aldehydes was established using the catalytic system, producing various allyl acylhydrazones. Additionally, the functionalized allyl acylhydrazones could be smoothly constructed with the catalytic system employing allylhydrazones as a partner. The catalytic system exhibited good functional tolerance with excellent regioselectivities and scaled-up capability, overcoming the limitations of chemoselectivity of the multicomponent transformation and poor conversion of the weak nucleophile.

Effect of O-doping on electronic and optical properties of monolayer MoSe2 under shear deformation.

CONTEXT: In this study, the electronic structures and optical properties of the pure MoSe2 and O-doped MoSe2 systems under different shear deformations are calculated based on the first-principles approach. It is hoped to provide new possibilities for the design of novel controllable optoelectronic devices and to provide guidance for the application of MoSe2 in the field of optoelectronic devices. The findings indicate that both pure MoSe2 and O-doped MoSe2 systems are somewhat impacted by shear deformation. The pure MoSe2 undergoes a transition from direct to indirect and then to direct bandgap under shear deformation, but still maintains the semiconductor properties. The bandgap of the doped system changes from a direct to an indirect bandgap at 8% shear deformation. According to the examination of the density of states, we find that the density of states of the pure MoSe2 system is mainly contributed by the Mo-d and Se-p orbitals, and the total density of states of the system after O-atom doping mainly originates from the results of the contributions of the Mo-d, Se-p, and O-p orbitals. Optical property analysis reveals that the conductivity and peak value of the pure MoSe2 system are gradually red-shifted toward the low-energy region with the increase of shear deformation. The dielectric function of the O-doped MoSe2 system is red-shifted in the region of 6~10% shear deformation, and the degree of red-shift rises with deformation amount. The findings demonstrate that the electrical structure and optical characteristics of the O-doped MoSe2 system may be modulated effectively by shear deformation, providing a theoretical foundation for expanding the usage of MoSe2 materials in the field of optoelectronic devices. METHODS: This study is founded on the CASTEP module in the Materials-Studio software within the first-principles of the density-functional theory framework. The photoelectric properties of the intrinsic and doped systems under shear deformation are calculated using the Perdew-Burke-Ernzerh (PBE) of generalized function under the generalized gradient approximation (GGA). The Monkhorst-Pack special K-point sampling method is used in the calculations, and a 5 × 5 × 1 K-point grid is used for the calculations with a plane-wave truncation energy of 400 eV in the optimization of the structure of each model. After geometrical optimization, the energy convergence criterion for each atom is 1 × 10-5 eV/atom, the force convergence criterion is 0.05 eV/Å, and a vacuum layer of 20 Å in the c-direction is set.

First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2.

CONTEXT: In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe2 in the field of optoelectronic devices. METHODS: This study utilizes the first principle computational software package MS8.0 (Materials studio8.0) under density functional theory (DFT). The exchange-correlation potential (GGA-PBE) is described by the Perdew-Burke-Ernzerhof correlation function in CASTEP, and the potential function adopts the ultrasoft pseudopotential in the inverse space formulation. The plane wave truncation energy Ecut is set to 400 eV, the K-point is taken as 5 × 5 × 1, and the force convergence criterion is 0.05 eV/Å. The convergence accuracy of the total energy of the system is less than 1.0 × 10-5 eV/atom, the tolerance shift is less than 0.002 Å, and the stress deviation is less than 0.1 GPa. The vacuum layer is taken as 15 Å, which is intended to minimize the interlayer force. The vacuum layer was set to 15 Å to avoid the effect of layer-to-layer interaction forces in the crystal cell.

First-principles study of the electronic structure and optical properties of C-doped SnS2.

CONTEXT: Density functional theory (DFT) was used to investigate the effects of varying carbon doping concentrations on the electronic and optical properties of SnS2-doped systems. The findings show that a doping concentration of 3.7% in SnS2 results in the highest structural stability and the lowest formation energy. A pure SnS2 monolayer is an indirect bandgap semiconductor, and the result reveals that increasing carbon doping correlates with a gradual reduction in the system's bandgap. The density of states analysis reveals that the valence band comprises C-2p, S-3p, and Sn-5p orbitals, whereas the conduction band consists of S-3p, Sn-5 s, and C-2p orbitals. Furthermore, doping concentration appears to cause a redshift in both the absorption coefficient and reflection peaks, which both decrease as doping concentration increases. METHODS: The calculations for this study were performed using DFT within the CASTEP module of Materials Studio Segall et al. J Phys: Condens Matter 14(11):2717, 2002. The system parameters and structures were optimized to determine the electronic structure and optical properties. Geometric optimization and calculations were carried out with the generalized gradient approximation plane-wave pseudopotential method and the Perdew-Burke-Ernzerhof functional Perdew et al. Phys Rev Lett 80(4):891-891, 1998. The parameters for structural optimization included a plane-wave expansion cutoff energy set at 500 eV and a k-point mesh of 6 × 6 × 1 for Brillouin zone integration. The electronic convergence criteria were established at 1.0 × 10-5 eV/atom for the unit cell energy and 1.0 × 10-6 eV/atom for self-consistency. The internal stress deviation was maintained below 0.05 GPa, the atomic force interactions were kept under 0.03 eV/Å, and atomic displacements during geometric optimization were confined to less than 0.001 Å. To calculate the properties of the SnS2 monolayer, a vacuum spacing of 15 Å along the z-axis was introduced to prevent interactions between adjacent layers.

Molecular dynamics study of the mechanical properties of hydrated calcium silicate enhanced by functionalized carbon nanotubes.

CONTEXT: The incorporation of functionalized carbon nanotubes can enhance the mechanical properties of cement-based materials. However, the types of functional groups and their roles in composite materials are not yet clear. In this study, molecular dynamics (MD) simulation methods were employed to investigate the mechanical performance of hybridized calcium silicate hydrate gel reinforced with pure carbon nanotubes, epoxy-coated carbon nanotubes, carboxylated carbon nanotubes, and hydroxylated carbon nanotubes. The results indicate that the addition of all four types of nanotubes can enhance the mechanical properties of hydrated calcium silicate gel compared to pure C-S-H. Tensile loading results show that carbon nanotubes can act as bridges for microcracks in the composite material, and functionalized nanotubes exhibit a better reinforcing effect than pure carbon nanotubes. Under tensile stress, hydroxylated nanotubes are more effective in increasing the toughness of the composite material, while carboxylated nanotubes tend to enhance the strength of the composite material. The compressive loading results indicate that the compressive strength of cement-based materials is higher than their tensile strength. Overall, carboxylated nanotubes show particularly remarkable performance in enhancing the mechanical properties of cement-based materials. Compared to pure C-S-H gel, the tensile and compressive elastic moduli of carboxylated nanotube/C-S-H composite material increased by 18.13% and 34.78%, respectively. Its tensile and compressive strengths also increased by 30.40% and 40.23%, respectively. METHOD: All molecular dynamics simulations were performed on the classical computational simulation platform LAMMPS. In this paper, the parameters in the ClayFF force field are chosen to simulate calcium hydrated silicate (/C-S-H), and the ClayFF-CVFF combined force field is used to simulate the mechanical properties of the CNT/C-S-H molecular model structure.